Samsung has developed the first 3rd generation DDR4 10 nm DRAM - Ultimate Guide

Samsungis the world's largest memory manufacturer and has developed the first 10 nm DDR4 DRAM of 3rd generation 8 GB, the launch comes only 1 week after starting the serial production of the 12 GB LPDDR4X RAM chip. greater capacity of the world and 16 months after starting the mass production the DDR4 of 2Gb of class of 10 nm of 2nd generation.

The mass production of the 3rd generation 10 nm DDR4 DRAM is expected to start at the end of the second quarter of this year, targeting the next-generation enterprise servers and high-end PCs that will be launched in 2020.

The new 10nm DDR4 is the smallest memory processing node so far, the manufacturing productivity is more than 20%, they will look for the limits of DRAM solutions with much higher energy efficiency and performance.

Something to keep in mind is that third-generation DDR4 production does not use Extreme Ultra-Violet (EUV) processing.

According to Samsung the DDR4 1z-nm will be the wick to turn on the production of next-generation DRAM interfaces, as well as the DDR5, LPDDR5 and GDDR6.

The executive vice president of products and technology of Samsung's DRAM, Jung-bae Lee has said:

"Our commitment to overcome the greatest challenges in technology has always driven us towards greater innovation. We are pleased to have laid the groundwork for a stable production of next-generation DRAMs that will guarantee the best performance and energy efficiency. "

And he has also said that the company is prepared to meet the demand for DDR4 DRAM, they have also said that they will be "actively collaborating with global customers to deliver a variety of future memory solutions".